Research Topic: 2D Materials

July 15, 2026

van der Waals Heterostructures

Layered systems such as MnBi2Te4/Cr2Ge2Te6 and Td-MoTe2 provide tunable interfaces for engineering magnetic exchange, inversion asymmetry, and interfacial superconducting transport.

July 15, 2026

Microfabrication and Quantum Devices

Nanowires, nanoplates, thin-flake rings, and multi-terminal devices enable gate-tunable studies of Fermi-arc spin transport, quantum interference, Hall states, and superconducting circuits.

January 17, 2026

Unconventional hysteresis due to time-reversal symmetry breaking superconductivity in RbV3Sb5

The study of kagome materials has recently attracted much attention due to the presence of many electron-electron interaction-driven phases in a single material. In this work, we report time-reversal symmetry-breaking superconductivity in the thin-flake kagome material RbV3Sb5. Firstly, when an in-plane magnetic field is swept in opposite directions, we observe an unconventional form of hysteresis in magnetoresistance, which is different from the hysteresis induced by extrinsic mechanisms. In contrast, no such hysteresis is observed in CsV3Sb5 samples below their superconducting transition temperature. Strikingly, at a fixed magnetic field, the finite-resistance state in RbV3Sb5 can be transitioned into the superconducting state by applying and subsequently removing a large current. Secondly, at temperatures around 400 mK, the re-entrance of superconductivity occurs during an in-plane field-sweeping process with a fixed sweeping direction. The observations of the unconventional hysteresis and re-entrance suggest the existence of time-reversal symmetry-breaking superconducting states in RbV3Sb5.

September 15, 2025

Tunable Anomalous Hall Effect in Non-Magnetic Topological Semimetal Cd3As2 Nanoplates

The emergence of topology has profoundly transformed condensed matter physics, driving the discovery of topological materials, including topological semimetals. Here, we report the observation of gate-tunable anomalous Hall effect (AHE) in the non-magnetic Dirac semimetal Cd3As2. The anomalous Hall conductivity reaches the maximum when the gate voltage is near the Dirac point. Fitting the anomalous Hall resistivity using the scaling relationship of AHE reveals that the AHE in Cd3As2 is dominated by the intrinsic contribution of Berry curvature. Our results are valuable for understanding AHE in topological semimetals and could have possible potential applications in topological devices.