New publication: Tunable Anomalous Hall Effect in Non-Magnetic Topological Semimetal Cd3As2 Nanoplates
Our article Tunable Anomalous Hall Effect in Non-Magnetic Topological Semimetal Cd3As2 Nanoplates was first published online in Advanced Electronic Materials on September 15, 2025. The work demonstrates electrical control of an anomalous Hall response in a material without conventional magnetic order.
Why this matters
The anomalous Hall effect is usually associated with magnetism. In topological semimetals, however, the electronic wave functions can carry strong Berry curvature and generate an intrinsic transverse response even without a conventional ferromagnetic background. Being able to tune that response with a gate is important both for identifying its microscopic origin and for developing low-power topological electronic devices.
Key findings
In microfabricated Cd3As2 nanoplate devices, the anomalous Hall conductivity changes systematically with gate voltage and reaches its maximum when the Fermi level approaches the Dirac point. This direct correlation between carrier tuning and Hall response shows that the effect is tied to the topological electronic structure rather than to a fixed magnetic contribution.
Scaling analysis of the anomalous Hall resistivity further indicates that the dominant contribution is intrinsic and originates from Berry curvature. The measurements therefore connect a gate-controlled device observable with a fundamental geometric property of the electronic bands.
LinLab’s role
This work extends our research program on microfabricated topological-semimetal devices and precision quantum transport. Dr. Shuo WANG and Dr. Ben-Chuan LIN participated in the collaborative investigation, with Dr. Lin serving as a corresponding author. The study links device-level gate control and Hall measurements to the broader study of tunable topological transport in Cd3As2.
Collaboration and outlook
The study was jointly completed with the groups led by Professor Yan-Fei Wu and Professor Shou-Guo Wang at the University of Science and Technology Beijing. The results offer a practical platform for separating intrinsic Berry-curvature physics from extrinsic Hall mechanisms and motivate future studies of nonvolatile, gate-programmable, and symmetry-controlled topological devices.